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DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D050
BB417 UHF variable capacitance diode
Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03
Philips Semiconductors
Product specification
UHF variable capacitance diode
FEATURES * Excellent linearity * Hermetically sealed leaded glass SOD68 (DO-34) package * C15: 3 pF; ratio: 3.5. APPLICATIONS * Automatic frequency control * VCO. DESCRIPTION The BB417 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 28 V; see Fig.3 VR = 28 V; Tj = 85 C; see Fig.3 f = 470 MHz; note 1 VR = 4 V; f = 1 MHz; see Figs 2 and 4 VR = 15 V; f = 1 MHz; see Figs 2 and 4 C d ( 4V ) -------------------C d ( 15V ) Note 1. VR is the value at which Cd = 9 pF. f = 1 MHz MIN. - - - 8 2.2 2 TYP. - - - - - -
Cathode side indicated by a white band on a black body. k handbook, halfpage a
BB417
MAM159
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature - - -55 -55 MIN. MAX. 30 20 +150 +100 V mA C C UNIT
MAX. 10 200 0.75 11 4 5
UNIT nA nA pF pF
1996 May 03
2
Philips Semiconductors
Product specification
UHF variable capacitance diode
GRAPHICAL DATA
BB417
MBE874
handbook, full pagewidth
20
Cd (pF) 16
12
8
4
0 10 -1 f = 1 MHz; Tj = 25 C.
1
10
VR (V)
10 2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10 3 handbook, halfpage
MLC816
10 3 handbook, halfpage
MLC815
IR (nA)
TC d (K-1)
102
10 4
10
0
50
T j ( C)
o
100
10 5 10 1
1
10
VR (V)
102
Tj = 0 to 85 C.
Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values.
Temperature coefficient of diode capacitance as a function of reverse voltage; typical values.
1996 May 03
3
Philips Semiconductors
Product specification
UHF variable capacitance diode
PACKAGE OUTLINE
BB417
handbook, full pagewidth
0.55 max 1.6 max 25.4 min 3.04 max 25.4 min
MSA212 - 1
Dimensions in mm.
Fig.5 SOD68 (DO-34).
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 May 03
4

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